| 摘要 |
<p>A Schottky gate FET is fabricated by forming on a semiconductor substrate (20) first and second stacks (26a, 26b) facing each other. Each stack (26a, 26b)-is constructed by an ohmic electrode (24a, 24b) and a spacer film (25a, 25b). On the substrate (20) having stacks (26a, 26b) formed thereon an insulation layer is formed and is anisotropically etched in the direction of its thickness until the planar surface portions are exposed. As a result, portions (27a, 27b) of the insulation layer remain on opposing side walls of the stacks (26a, 26b). After removing the spacer films (25a, 25b) to define stepped portions between each remaining portion (27a, 27b) and each electrode (24a, 24b), a layer of a metallic material capable of forming a Schottky barrier with the substrate (20) is formed. The remaining portions (27a, 27b) are removed to pattern the metallic material layer, thereby forming a Shottky gate electrode (28'c).</p> |
