| 摘要 |
PURPOSE:To prevent the fusion and recrystallization of an Si substrate from generating at the single crystallization of an Si layer by a method wherein a metal, with which Si forms a liquid phase alloy at the temperature lower than the melting point of Si, is added to an Si polycrystalline layer, or it is coated on the upper or lower part of said Si polycrystalline layer. CONSTITUTION:A substrate 2, which is the sample whereon an Si layer will be single- crystallized, is formed by coating e.g. an SiO2 film 5, which is an insulating film, on an Si substrate 4, a polycrystalline Si layer 6 is coated thereon, and then an Sn layer 7 is coated on the above. The part 8, where the Si substrate 4 and the polycrystalline Si layer 6 come in contact with each other, is the part which will be turned to seed crystal to be used for single-crystallization of the polycrystal-line Si layer 6. This seed crystal to-be parts are longitudinally and latterally provided on the substrate 2, they have the width of 100mum, and the measurement of the part 9 corresponding to a chip is 5mm. square. Pertaining to the quantitative ratio of the polycrystalline Si layer 6 and the Sn layer 7, the desirable quantity of the Si is 20-98% of that of the polycrystalline Si. Besides, as there remains the Sn layer 7 on the surface of the sample whereon a recrystallization is performed on the polycrystalline Si layer 6, it is removed by performing an etching using dilute hydrochloric acid. |
