| 摘要 |
PURPOSE:To limit reflected electrons or secondary electrons reflected from the surface to be measured only in a section in the vicinity of the surface to be measured, and to measure the surface accurately by bringing the acceleration voltage of beams to a specific value or less when electron beams are irradiated to the surface, reflected electrons or secondary electrons reflected from the surface are detected and the desired size is measured. CONSTITUTION:When the size of the surface of a resist layer 2 is measured in an IC process, etc., electron beams 1 are irradiated to the surface, and reflected electrons or secondary electrons 4a and 4b reflected from end sections are detected by using detector 3a and 3b. When the acceleration voltage of electron beams 1 is brought to 5kV or less at that time, informations only of a section in the vicinity of the surface are obtained because there is a peak value of absorbed energy in a section separated from the surface by approximately 0.3mum, and electrons are charged up only in one part in the vicinity of the surface. Accordingly, the desired length is measured accurately. |
