| 摘要 |
PURPOSE:To maintain an excellent electrode-surface even after annealing treatment at a high temperature by interposing a high melting-point transition metal nitride conductor layer of a kind different from a conductor layer between the conductor layer and a metallic layer of the III-V type inter-element compound semiconductor device. CONSTITUTION:The surface of an n type implantation layer 11 formed by implanting the ions of an element such as Si atoms to a GaAs base body 1 is coated with a W nitride layer 2, a Ta nitride layer 3 and an Au layer 4 in thickness of -2,000Angstrom , -1,000Angstrom and -4,000Angstrom in succession through a sputtering method. A gate electrode 5 and a high-concentration implantation layer 12 of Si atoms are formed by using a photoetching method. A CVDSiO2 film 6 in thickness of -8,000Angstrom is deposited on the whole surface of the GaAs base body 1, the whole is annealed and treated for fifteen min at 820 deg.C, and activated, the SiO2 film 6 is removed, and a source electrode 7 and a drain electrode 8 are formed to the n<+> layer 12, thus constituting a self-alignment type FET.
|
