| 摘要 |
PURPOSE:To manufacture a high-speed integrated circuit, the degree of integration thereof is extremely high, by introducing P type and N type impurities through a high melting-point metal thinly deposited on polysilicon. CONSTITUTION:The high melting-point metal 2 in molybdenum, etc. of approximately 1,000Angstrom is deposited on polysilicon 1, and patterned. The ions of the P type impurity 3 such as boron are implanted into a P channel region and the ions of the N type impurity 4 such as phosphorus into an N channel region, and introduced through the high melting-point metal. Accordingly, structure in which a junction between the P type polysilicon 5 and the N type polysilicon 6 is short- circuited by a silicide substance 7 of the high melting-point metal in the wiring of polysilicon is formed, and a second layer wiring can be formed on the junction through an inter-layer insulating film, thus largely contributing to the increase of the degree of integration and the facilitation of a design. |
