| 摘要 |
PURPOSE:To prevent the generation of a crystal defect in an active layer by dividing an upper clad layer into two, extremely thinning the thickness of a lower layer being directly in contact with the active layer and removing a region, which does not correspond to a stripe region of an upper layer. CONSTITUTION:A lower clad layer 12, the active layer 13, the upper clad layer first layer 14' in approximately 0.3mum thickness and a layer 14'' as the upper clad layer second layer in approximately 2mum thickness are formed on the surface of a substrate 11, an upper confining layer 14 is left, and the layer 14'' is removed. A current limiting layer 15 is buried and formed at a growth temperature of approximately 550 deg.C. The upper clad first layer 14' functions as a protective layer during the growth period to directly protect the active layer 13 from a thermal atmosphere, and a thermal deterioration is prevented. |
