发明名称 Field programmable device with circuitry for detecting poor insulation between adjacent word lines
摘要 A field programmable device comprises regular word lines, regular bit lines, regular memory cells connected at the intersections of the regular word lines and the regular bit lines, at least one test word line adjacent to one of the regular bit lines, and alternately arranged conducting and nonconducting test memory cells arranged at the intersections of the test bit lines and the regular word lines. According to the invention, for the purpose of determining poor insulation between the word lines, the test bit line and the regular word line are insulated by an insulating layer in each nonconducting test memory cell.
申请公布号 US4459694(A) 申请公布日期 1984.07.10
申请号 US19810333653 申请日期 1981.12.23
申请人 FUJITSU LIMITED 发明人 UENO, KOUJI;FUKUSHIMA, TOSHITAKA;KOYAMA, KAZUMI
分类号 G11C29/00;G11C17/00;G11C29/04;G11C29/24;H01L21/66;H01L21/822;H01L21/8229;H01L27/04;H01L27/102;(IPC1-7):G06F11/22 主分类号 G11C29/00
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