| 发明名称 |
Method of deposition of silicon carbide layers on substrates and product |
| 摘要 |
A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800 DEG C. to 1050 DEG C. when the substrates have been confined within a suitable coating environment.
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| 申请公布号 |
US4459338(A) |
申请公布日期 |
1984.07.10 |
| 申请号 |
US19820360116 |
申请日期 |
1982.03.19 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY |
发明人 |
ANGELINI, PETER;DEVORE, CHARLES E.;LACKEY, WALTER J.;BLANCO, RAYMOND E.;STINTON, DAVID P. |
| 分类号 |
C23C16/32;G21F9/34;(IPC1-7):B32B5/16;B32B9/00 |
主分类号 |
C23C16/32 |
| 代理机构 |
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代理人 |
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| 主权项 |
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