Process for fabricating semi-conductive oxide between two poly silicon gate electrodes

摘要

A process for placing non-continuous Dual Electron Injection Structures (DEIS) between two layers of polysilicon used to form an array of poly devices on an integrated circuit substrate. Separate masks are used to define Poly 1 and Poly 2 devices, respectively. The DEIS structure is disposed above the poly 1 devices. A silicon nitride (Si3N4) layer is used to mask the DEIS structure and prevents it from oxidizing during certain processing steps. A thin layer of poly x is placed between the DEIS structure and the Si3N4. The poly x layer forms a buffer and protects the DEIS during an etching step which removes the Si3N4 layer.