发明名称 |
Sense amplifier using different threshold MOS devices |
摘要 |
A sense amplifier quickly charges a column line to a first predetermined voltage level with first, second and third transistors and then charges the column to a second predetermined voltage by using only the second and third transistors. The second and third transistors continue charging to the second predetermined voltage by virtue of having a lower threshold voltage than the first transistor. If a selected memory cell in the column is in a conducting state, the column charges to only the first predetermined voltage for detection as a logic "0". If the selected memory cell in the column is in a non-conducting state, the column continues charging to the second predetermined voltage for detection as a logic "1".
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申请公布号 |
US4459497(A) |
申请公布日期 |
1984.07.10 |
申请号 |
US19820342040 |
申请日期 |
1982.01.25 |
申请人 |
MOTOROLA, INC. |
发明人 |
KUO, CLINTON C. K.;LEUSCHNER, HORST |
分类号 |
G11C11/419;H03K5/02;(IPC1-7):H03K5/24;G11C7/06 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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