发明名称 Sense amplifier using different threshold MOS devices
摘要 A sense amplifier quickly charges a column line to a first predetermined voltage level with first, second and third transistors and then charges the column to a second predetermined voltage by using only the second and third transistors. The second and third transistors continue charging to the second predetermined voltage by virtue of having a lower threshold voltage than the first transistor. If a selected memory cell in the column is in a conducting state, the column charges to only the first predetermined voltage for detection as a logic "0". If the selected memory cell in the column is in a non-conducting state, the column continues charging to the second predetermined voltage for detection as a logic "1".
申请公布号 US4459497(A) 申请公布日期 1984.07.10
申请号 US19820342040 申请日期 1982.01.25
申请人 MOTOROLA, INC. 发明人 KUO, CLINTON C. K.;LEUSCHNER, HORST
分类号 G11C11/419;H03K5/02;(IPC1-7):H03K5/24;G11C7/06 主分类号 G11C11/419
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