| 摘要 |
A method for making semiconductor integrated circuits which improves and decreases fringing capacitance in semiconductor integrated circuits. An oxygenated, single-crystal silicon lamella is lightly doped, producing an excess of holes, thereby forming a semiconductor substrate. The substrate is used to fabricate semiconductor devices in the usual way, except that density may be slightly increased. After fabrication, the substrate is heated, preferably at 450 DEG C., until resistivity of the substrate has increased so that non-diffused regions of the substrate are substantially non-conductive.
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