| 摘要 |
PURPOSE:To improve the heat dissipation effect and the high frequency characteristics of an IC circuit by making the thickness of a carrier thin at the high frequency connecting section and thick at the center part so as to increase the strength of the carrier and dissipating heat from the side face of the carrier. CONSTITUTION:After applying Au plating to the carrier 11 made of Cu or the like, having a projection section 111 at the rear side of the center and provided with plural screw holes 112 to a side face of the projection and a fitting hole 113 to a case 10, a semiconductor chip 3 and a conductor 41 adjacent to the chip 3 in the form sandwiching the chip 3 at a prescribed distance are bonded to the side of carrier opposite to the side formed with the projection 111. The carrier projection section 111 is mounted by inserting it into the groove 102 of the case 10 formed with the groove 102 to which the projection 111 of the carrier 11 is inserted and screwed to a tightening screw 8 and the projection section 111 is screwed with a tightening screw 12 also from the side face of the case 10. Thus, the heat produced from the semiconductor chip 3 is dissipated from the side face of the carrier 11 toward the arrow. |
