发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To quicken the access time of a memory device, and also to decrease the external part for constituting the memory device by providing a circuit for inputting the first address signal in response to a strobe signal from the outside, and outputting an acknowledge signal for indicating that the input of the first address signal concerned is ended, after said input is ended. CONSTITUTION:When the read of a low address signal is ended in all memory chips, a switching signal SW obtains a high level due to a pull-up resistance and an external multiplexer 9 is switched. The external multiplexer 9 is operated to impress a low address signal RA to an address input terminal ADD of each memory chip when the switching signal SW is at a low level, and a column address signal CA is impressed to the address input terminal concerned ADD in case of a high level. In each memory chip 8-1, 8-2,-8-8, a column address strobe signal is generated in the inside of the chip in a prescribed time after the time point when an acknowledge signal ACK obtains a high level to read the column address signal CA from the external multiplexer 9.
申请公布号 JPS59116980(A) 申请公布日期 1984.07.06
申请号 JP19820223679 申请日期 1982.12.22
申请人 FUJITSU KK 发明人 KAWASHIMA SHIYOUICHIROU
分类号 G11C8/00 主分类号 G11C8/00
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