| 摘要 |
PURPOSE:To form an isolation silicon oxide film flatter than the conventional one with less inroads into the film by a method wherein an isolation insulating film is formed by means of low temperature sputtering or evaporation. CONSTITUTION:A silicon substrate 1 is coated with a resist 4 for optical or electronic beams and the resist 4 is patterned into an isolation region 11 between a elements and an active region 12 by means of makeup technology utilizing optical or electronic beams. Then said regions are etched by reactive ionetching and the part corresponding to the isolation region 11 of the silicon substrate 1 is etched to the specified depth. Successively an isolation insulating film 5 such as silicon oxide film or silicon nitride film is deposited by sputtering or evaporation of the depth equivalent to or a little bit thicker than said etching depth. Later, the insulating film 5 on this resist 4 is lifted off by means of melting the resist 4. Through these procedures, the isolation insulating film 5 may be formed on the isolation region 11 between elements of the silicon substrate. |
