| 摘要 |
PURPOSE:To miniaturize an LSI by eliminating the need for a ground and connecting the drains and sources of all MOSs in a MOS row. CONSTITUTION:Transistors T1-4 each correspond to one memory cell, and word lines A1-4 are each connected to gate electrodes. One drain electrodes and the other source electrodes are connected to the adjacent transistors, and contacts C2-4 are positioned at the contacts. A contact C1 is positioned at the drain electrode of the transistor T1 at an upper end and a contact C5 at the source electrode of the transistor T4 at a lower end. The contacts C1 and C5 are conducted when the drain electrode contact and source electrode contact of a cell selected are short-circuited by an aluminum wiring, and the contacts C1 and C5 are not conducted when both contacts are not short-circuited. Accordingly, informations written according to a program are read. |
