| 摘要 |
PURPOSE:To improve the deterioration of forward current to voltage characteristics of the photo detector by forming a transparent electrode on a photoconductive film and heating and treating the photo detector within a range of specific time. CONSTITUTION:The photoconductive films 3, 4 consisting of an amorphous material containing hydrogen while mainly comprising silicon are laminated and formed on a substrate 1 through a glow discharge CVD method in order of N<+> type conductive layers 31, 41, I or N type conductive layers 32, 42 and P type conductive layers 33, 43. SiO2 Is deposited on the substrate 1 through a sputtering method, and insulating films 5 are formed. A transparent conductive film 7 is formed on the conductive films 3, 4 through the sputtering method. The photo detector is heated within a range of time represented by (t+350)XT<2X 10<5> at absolute temperature T deg.K (where t: heating time.min). |
