SOLID-STATE IMAGE PICKUP ELEMENT

摘要

PURPOSE:To improve the dynamic range and the sensitivity by connecting a photoconductive film to a gate of a vertical switch MOS transistor (TR) and providing an MOS TR resetting a voltage of the former MOS TR. CONSTITUTION:A transparent electrode 13 and a photoconductive film 14 are conected in series with a gate section of the vertical MOS TR3 constituting each picture element 4 and an MOS TR16 is connected. Further, an MOS TR17 reading a signal charge outputted from the picture element 4 to a vertical signal line 290a corresponding to an output pulse of a vertical shift register 6 is connected to a drain section of the MOS TR3. When a vertical gate line 6a is at H level and a horizontal switch MOS TR9 is at H level, a saturated current flows from a video bias 7 via a load resistor 8 by positive holes stored on the photoconductive film 14 and a signal is detected at a point A.