| 摘要 |
PURPOSE:To furnish a magnetic bubble memory element provided with a bubble magnetic domain transfer passage that can obtain high memory density in a bubble magnetic domain transfer passage of two-layer ''Permalloy'' system by improving the pattern shape. CONSTITUTION:The first layer ''Permalloy'' pattern 12 and the second layer ''Permalloy'' pattern 13 are formed on a material layer 10 with a spacer layer 14 between. They have the same plane figure and provided with an element 12a or 13a that constitutes the first position and an element 12b or 13b that constitutes the second position respectively, and formed in hook-shape that has at least two crooked parts. For easy forming of magnetic poles, the elements 12a, 13a, 12b, 13b are slender, and adjoining elements 12b and 13a are not parallel but form an angle of <=90 deg. (0 deg.<theta<90 deg.). In this constitution, the sufficient transfer margin is obtained in the transfer passage of basic period of <=4mum period, and the large allowance for deviation of positioning of the first layer and the second layer ''Permalloy'' patterns is obtained. |
