| 摘要 |
<p>PURPOSE:To contrive to enhance manufacturing yield of chips at the circumferential part of a wafer by a method wherein lengths of the sides at least on one side out of sizes in length and width of the element chips to be arranged and to be formed on the circumferential part of the wafer are formed smaller than the size of element chips at the central part. CONSTITUTION:Element chips 3 are formed in a meausre type on the surface of a wafer 1, the element chips 3A of comparatively large sizes in length and width are formed at the central part 4 of the wafer surrounded with cutting lines l1, l2 in length and width, and the element chips 3B, 3C of small size are formed at the circumferential part 5 of the wafer on the outside thereof. Namely, the element chips 3A are formed by forming respective cutting lines l3, l4 in length and width at the central part 4 at the interval t1 to correspond to the element chips 3A, while the interval t2 of respective cutting lines l5, l6 in length and width to cross respectively the respective cutting lines l3, l4 are formed smaller than the interval t1 at the circumferential part 5. Accordingly, because the element chips 3B, 3C formed at the circumferential part 5 of the wafer 1 are smaller than the chips 3A at the central part 4, the number of generation of inferior chips is reduced less than the case when chips of the same size with the central part are formed even in the condition having defect density at the circumferential part of the wafer higher than the central part.</p> |
