| 摘要 |
PURPOSE:To enable to complete a wire connection work by performing only one process for heating and pressurization by a method wherein, after conductive paste has been printed and sintered on the surface of a semiconductor wafer, a fine metal wire group is placed thereon and the fine metal wires are heated and pressurized for the wafer. CONSTITUTION:Al paste 2 is printed and sintered on the surface of the Si wafer 1 formed on a P-N junction part. An alloy layer 2 and a duct 3 are formed by performing a sintering. Then, they are placed between heaters 7 and 7' without removing the duct 3. At the same time, a plurality of lead wire groups 5' are arranged between the heater 7' and the duct 3. the heaters 7 and 7' are heated up under the condition where the above-mentioned positional relations are maintained and, at the same time, said heaters 7 and 7' are moved in the direction of the arrows P and P as shown in the diagram, and the wafer 1 and the wire group 5' are pressurized. As a result, the wire group 5' enters into the duct 3, the wire group 5' comes in contact with the alloy layer 2 and fixed. To be more precise, attracting force is generated between the wire group 5' and the duct 3 and the wire group 5' and the layer 2, and an excellent ohmic contact state is formed between the wire group 5' and the layer 2 by the above-mentioned attracting force. |
