| 摘要 |
PURPOSE:To enable to make an N-P-N transistor smaller in size in a simple manner when it has the IC having the working voltage less than Zener voltage by a method wherein an insulated region, having the collector contact of the transistor to be formed on semiconductor substrate, is brought closer to the high density region of the collector contact allowing former to come in contact with the latter. CONSTITUTION:An N<-> type layer 4 to be turned to a collector is epitaxially grown on a P<-> type Si substrate 9, said layer 4 is formed in island shape at a P<+> type insulating layer 5 which reaches the substrate 9, a P<+> type base region 2 is formed by diffusion on said layer 4, and an N<+> type emitter region 3 is provided in the region 2. Then, when an N<+> type collector contact region 1 is formed by diffusion between the region 3 and a layer 5, the region 1 and the layer 5 are formed in such a manner that they come in contact with each other. Through the above procedures, a Zener diode is generated between the region 1 and the layer 5, but ordinarily the layer 5 is biased at the mimimum potential and the generated Zener diode is not biased in forward direction, thereby enabling to make the transistor smaller in size. |
