| 摘要 |
PURPOSE:To obtain stably multilayered growing layers on a large number of substrate by combining plural storages of molten liquid having an opening hole, a sliding plate having a through hole, and a substrate container having a communicating part so as to work a specified action. CONSTITUTION:Molten liquid 12, 12, 12 having a prescribed composition is charged in a storage of molten liquid 1, 1, 1. Semiconductor substrata 17, 17, 17 are pasted to substrate base 7, heated to the prescribed temp. in a furnace and maintained. A substrate container 5 is rotated so as to bring the communicated part right overhead, and a sliding plate 3 is slid. When a through hole 4 of the sliding plate 3 is made to coincide with the opening hole 2 of the storage 1 of molten liquid, the molten liquid 12 is flowed into the substrate container 5 by passing the opening hole 2, the through hole 4, the guide hole 9 and the communicating part 6, and the semiconductor substrata 17, 17, 17 are brought into contact with said liquid 12. After the movement of said liquid 12 is stopped, the sliding plate 3 is slid, and the position of the through hole 14 is moved. The substrate container 5 is rotated by an angle of 90 degrees so as to place the semiconductor substrata 17, 17, 17 in the horizontal position. Then, the epitaxial growth is carried out by lowering the temp. at a prescribed rate. |
