| 摘要 |
PURPOSE:To obtain a titled crystal having high magnetic wall mobility and suitable for high-speed transfer by growing a magnetic garnet film represented by YxEuyLuz(CaGe)tFe5-tO12 on a Gd3Ga5O12 single crystal substrate and specifying the compositional ratio of Y, Eu, Lu. CONSTITUTION:Eu with a lattice constant approximate to Sm is selected as a substituted ion for Sm in a bubble crystal shown as (YSmLuCa)3(GaFe)5-O12, and a magnetic garnet film represented by a chemical formula of YxEuyLuz (CaGe)tFe5-tO12 is formed on a Gd3Ga5O12 single crystal substrate by the liquid epitaxial growth. Besides, the compositional ratio of Y, Eu, Lu is obtained from a prescribed calculating equation having x, y and z as independent parameters where x+y+z+t=3, 0.3<t<=0.60, and exists on a quadrilateral on the surface (x, y) having A(0.3, 0.7), B(0.4, 0.6), C(0.5, 0.6) and D(0.4, 0.7) as apexes. The titled crystal having high bubble mobility and suitable for high-speed transfer is obtained by this method. |
