| 摘要 |
PURPOSE:To obtain a flat insulating film even on a semiconductor substrate which has an irregular surface by forming a wiring layer of the prescribed pattern on the substrate, coating a thin film when coating the entire surface including the wiring layer with an insulating film, removing only a surface layer, and again covering with a thin film, thereby sequentially setting in the prescribed thickness. CONSTITUTION:An aluminum wiring layer having approx. 1mum of thickness is formed on a semiconductor substrate 11, and an SiO2 film 13 similarly having approx. 1mum of thickness is coated by sputtering on the overall surface including the layer 12. The coating of the film 13 at this time is not simultaneously performed, but the film 13a having several 100Angstrom is first coated, is then vertically etched by an ion milling method, and the surface layer is removed in the thickness of approx. 200-300Angstrom . The thickness thus removed is the value on the flat surface, but the layer 12 is vigorously etched, and the exposed end part is almost removed. Therefore, the film 13b having several 100Angstrom is again laminated and coated by the sputtering method, and part is again removed. After such operation is repeated several tens times, and a smooth film 13 is then produced on the overall surface. |
