| 摘要 |
PURPOSE:To obtain the highly reliable device by a method wherein a polycrystalline Si film is coated on an Si substrate through a ground oxide film, a reactive ion etching is performed by using a resist pattern as the mask for thinning the width of the non-wiring part of the Si film and the non-wiring part is turned into an insulating protective film by performing a thermal oxidation, and, at the same time, the wiring part of the Si film is made to remain under the mask, when a polycrystalline Si wiring and the insulating protective film are formed. CONSTITUTION:A ground SiO2 film 12 is formed on an Si substrate 11 for depositing a polycrystalline Si film 13 on the whole surface thereof by a CVD method and the Si film 13 is covered with a resist pattern 14 in the prescribed shape. A reactive ion etching is performed using the pattern 14 as the mask for thinning the width of the film 13. Then, the pattern 14 is removed and the film 13 is turned into an SiO2 film 15 with an expanded volume by performing a thermal oxidation, and, at the same time, the surface of the film 13 remaining under the pattern 14 is also covered with the film 15. As a result, the film 15 is used as an insulating protective film, while the remaining film 13 is used for a wiring 13'. According to such a method, no pin-hole generates on the shoulder part of the wiring 13'. |
