发明名称 DIODE OF HIGH WITHSTAND VOLTAGE
摘要 <p>PURPOSE:To make uniform the reverse directional recovery time and thus obtain a diode of a high speed and high withstand voltage which can perform stable high frequency action by a method wherein the forward directional voltage drop of a semiconductor pellet at the center of a laminated body is made lower than those of semiconductor pellets at both ends of this laminated body. CONSTITUTION:A plurality of semiconductor pellets 11-15 wherein the reverse directional recovery time is controlled short for speed-up are laminated by means of solder 2 in order to obtain a high withstand voltage, and further soldered to external lead-out electrodes 3. At this time, the forward directional voltage drop VF11-VF15 of each semiconductor pellet 11-15 is in the relation of VF11>VF12> VF13>VF14>VF15, and the pellets are connected in series. In the case of forward directional conduction, a difference generates to heat generation, the relation that the heat generation is small at the center and heat dissipation is small at the center holds, and accordingly the junction temperature of each semiconductor pellet increases uniformly.</p>
申请公布号 JPS59114851(A) 申请公布日期 1984.07.03
申请号 JP19820224715 申请日期 1982.12.21
申请人 NIPPON DENKI KK 发明人 TOSHIMA MASAYUKI
分类号 H01L25/07 主分类号 H01L25/07
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