| 摘要 |
PURPOSE:To enable to accurately and simply perform the measurement of impurity level or crystal defect level in a micro region or the evaluation of the distribution thereof inside the surface by a method wherein a semiconductor sample is intermittently irradiated with energy beams, and the time response of the variation of capacitances or currents of the sample generated thereby is analyzed by an ICTS method. CONSTITUTION:To perform the measurement by the ICTS method, the time variation of the capacitances (or curres) of the sample S under the equal temperature after electron beam irradiation is measured by means of a capacity meter (ampere meter) 3, the analog output therefrom is digitized by an A/D converter 5a in a wave form analyzer 5, inputted and memorized in a computer 5c having wave form analyzing ability via an interface 5b, thus performing the analysis of the deep impurity level or crystal defect level. Besides, in order to display the distribution inside the surface of the impurity level or crystal defect level in bi-dimensional manner, while scanning an electron beam EB 1', the brightness modulation 10 for a CRT 9 incorporated in an electron beam irradiation device 1 can be performed by the output of the wave form analyzer 5. A DLTS method can be performed while the temperature of the sample is varied by the constitution of this device. |
