| 摘要 |
PURPOSE:To enable the flattening of semiconductor device regardless of the pattern shapes by a method wherein an insulating film to be flattened is formed, on which resist is coated and patterning is done and the large cavities are filled with dummy resist and the upper resist is coated on the whole surface and uniform-speed etching is performed. CONSTITUTION:The surface of an insulating film 3 is uneven because of unevenness of a semiconductor substrate 1 which is the base of the film 3 caused by conductors 2. The surface of the semiconductor substrate covered with such insulating film 3 is coated with thin film of photoresist 5. This photoresist film 5 is removed by etching whereas leaving the photoresist film 5a coated on large and relatively wide cavities produced on the surface of the insulating film 3. Next, photoresist 6 is coated on the whole surface of the substrate and the photoresist 6 is then subjected to the overall etching under the same condition as that of said uniform-speed etching of the resist film 5a and the insulating film 3. During the process of etching, the insulating film on projecting parts is also removed similarly to the photoresist. |
