| 摘要 |
PURPOSE:To secure a desired aluminum wire width without using etchant for aluminum. CONSTITUTION:After forming a photo resist film 4, a hole having a desired size W1 is formed by a photolithography technique. An aluminum thin film 3 is formed by a vacuum deposition method. At this time, aluminum may deposit also on the wall surface 7 of the hole, which is the order of 1/100-1/1000 as compared with the thickness of the aluminum thin fil 3. When the photo resist film 4 is removed, an aluminum island 8 having the size of W1 can be formed. As the method for removing the photo resist film 4, a dry etching method generally called a plasma asher can be used, or the dipping in the organic solution which removes only the photo resist film 4 without dipping aluminum can be performed. If aluminum deposits on the wall surface 7, and the photo resist film 4 is not removed by this method, the surface is left lightly in the etchant for aluminum before using this method. |
