| 摘要 |
PURPOSE:To enable to form a single crystal semiconductor layer of homogeneity and a large area and thus obtain a laminated integrated circuit element of good quality by using a dielectric of a high thermal conductivity for an insulation film interposed between a semiconductor layer. CONSTITUTION:An Mo film 13 is deposited on the surface of an Si substrate 11 and patterned to an electrode or wiring form. Next, a boron nitride film 15 is formed on the semiconductor layer after wiring to a film thickness of 0.5mm. or more. With the boron nitride film 15 as an insulation film, amorphous Si 21 is formed in the upper part to approx. 0.5mum, and thereafter the Si film 21 is single-crystallized by the irradiation of an Ar laser. Since the thermal conductivity of boron nitride is high, the heating by the laser beam is relatively rapidly transmitted to the periphery, and the uniformity of the temperature distribution of the amorphous Si can be contrived regardless of the presence of an Mo electrode, accordingly the single crystal of a uniform film quality and a large grain diameter can be prepared. In addition to boron nitride, a dielectric material having the value of thermal conductivity at 0.1J/cm.sec.deg. or more can be utilized. |
