| 摘要 |
PURPOSE:To obtain a high aperture rate by stably and securely removing a product even when the dimension of the aperture becomes fine by a method wherein the product formed on the surface of an aluminum wiring at the aperture at the time of removing a photo resist is removed by reactive ion etching after forming the aperture through an insulation film on the aluminum wiring with the photo resist as a mask. CONSTITUTION:After forming a through hole 28, the photo resist 26 having served as the mask is removed. Removal of this photo resist 26 is performed by O2 plasma or by dipping in nitric acid series solution. At the time of removing this photo resist 26, an oxide 29 is produced on the surface of the first layer aluminum wiring 24 at the through hole part. Next, this oxide 29 is removed. Removal of this oxide 29 is performed by the reactive ion etching using a parallel flat type dry etching device. After removing the oxide 29 on the surface of the first layer aluminum wiring 24 at the through hole part, the second layer aluminum wiring 30 is so formed as to be connected to the first layer aluminum wiring 24 via the through hole 28. |
