| 摘要 |
PURPOSE:To facilitate reduction of width of patterns of electrodes and so forth, especially submicronization of that by a method wherein a second conductive film 2 having larger directivity than a first conductive film 1 is formed on the first conductive film, after which the exposed area of the first conductive film is selectively removed using the second conductive film as a mask. CONSTITUTION:An SiO2 film 4 is etched using a resist film 5 as a mask and further N type operation layer 2 is etched. Next, a first metallic film 6 form a Schottky contact for N type operation layer 2 is formed on the surface of said layer 2 under the resist film 5 and the opening of the film 5. A second metallic film 7 of low resistance and being suitable for forming electrodes is formed on the first metallic film 6 by making method of large directivity. After the resist film 5 is stripped to be removed, the exposed area of the first metallic film 6 is removed using the second metallic film 7 as a mask. Thus the gate electrode composed of the first metallic film 6 and the second metallic film 7 is formed. After that, the SiO2 film 4 is removed and a protective insulating film 8 consisting of SiO2 or the like is newly formed and a necessary wiring 9 is arranged. |
