| 摘要 |
PURPOSE:To improve the manufacturing yield and the reliability by a method wherein a wiring contact window of a fixed dimension is bored through the bottom surface after forming, on the surface of an insulation film, a recess larger than the fixed dimension of the wiring contact window and depositing an Si oxide layer on the side surface thereof in incline surface form. CONSTITUTION:The lower layer insulation film 12 of PSG, etc. and the lower layer Al wirings 13a and 13b are formed on a semiconductor substrate 11. Next, the first PSG film 14 and a resist film 15 are formed. Then, a resist coated surface is etched until the upper surface of the first PSG film 14 becomes smooth. An interlayer PSG insulation film 17 of the superposition of the first PSG film 14 and the second one 16 is formed, and the recess 18 larger than the fixed dimension of the wiring contact window at a fixed place of the interlayer PSG insulation film 17. A coating oxide film is spin-coated and then made to cover the recess 18, and the coating film 19 is modified into a perfect oxide film by cure. The wiring contact window 20 of the fixed dimension is bored through the bottom surface of the recess 18, and the upper layer Al wirings 21a and 21b which contact with the lower Al wirings 13a and 13b are formed via the wiring contact windows 20. |
