| 摘要 |
An insulated gate type transistor has a nonsaturating current characteristic as well as a saturating current type characteristic. P+, N, N+ or N+, P, P+ regions are juxtaposed in the horizontal direction in a semiconductor layer formed on an insulating layer. A gate electrode is provided on a portion of the N or P region through a gate insulating film, and the thickness of the N or P region beneath the gate electrode is less than pi /2 times of a Debye length inherent to the semiconductor constituting the active region.
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