FORMATION OF SILICON OXIDE FILM

摘要

PURPOSE:To obtain the SiO2 film stable thermally and an internal stress of which hardly changes at spattering by selecting RF power density and temperature of the substrate at spattering at a value by which the internal stress of silicon oxide film laminated on the substrate hardly changes regardless of condition of heat treatment after spattering. CONSTITUTION:The material to be spattered is set at one of opposed electrodes arranged in a reaction tank of a magnetron spattering device and at another electrode, an integrated circuit device on which an SiO2 film is laminated is set. On the side of the electrode on which the integrated circuit device substrate is set a heating means is provided to hold the substrate during spattering while heating at a predetermined temperature. Predetermined inert gas is introduced in the reaction tank after said materials are set at the electrodes and a power source is offered between the electrodes. High-frequency voltage is applied between the electrodes by actuation of a spattering device, and molecules or atoms jet out from the spattered materials for forming the SiO2 film are deposited on the surface of the substrate so as to form an SiO2 thin film on that surface.