| 摘要 |
PURPOSE:To manufacture excellent silicon film of advanced crystallization in comparison to the prior art, by a method wherein two laser beams by dividing one laser beam are partially superposed, and the laser beam having double- humped energy density distribution is constituted. CONSTITUTION:One laser beam is divided into two laser beams B1 and B2, and spots 26 and 27 of the laser beams B1 and B2 are partially overlapped with each other thereby laser beam B3 having double-humped energy density distribution 28 is formed. The laser beam B3 is projected on a polycrystalline silicon film 3 and scanned in arrow M direction thereby the polycrystalline silicon film 3 is made a single crystal. The polycrystalline silicon film 3 on which the laser beam B3 is scanned is melted by the heat energy, but corresponding to the double-humped energy the polycrystalline silicon film 3 after scanned also has double-humped characteristics at a border line 32 between a molten region 33 and a recrystallization region so that a single-crystal silicon region 32 is formed from the center to rear portion and a polycrystalline silicon region 31 is formed from the top end as the border towards both sides of the recrystallization region. |
