FORMATION OF SILICON NITRIDE FILM

摘要

PURPOSE:To obtain the SiN film stable thermally whereas maintaining the high film density that it possesses by performing heat treatment with a specified temperature after forming the SiN film by spattering method while increasing RF power density over a specified value. CONSTITUTION:The material to be spattered is set at one of opposed electrodes arranged in a reaction tank of magnetron spattering device and at another electrode, a substrate of integrated circuit device on which an SiN film is deposited is set. Predetermined inert gas is introduced into the reaction tank after said materials are set at the electrodes and a power source is offered between the eletrodes. High frequency voltage is applied between the electrodes by actuation of a spattering device and molecules or atoms issued from the spattered materials for forming the SiN film are deposited on the surface of the substrate so as to form the SiN thin film. Spattering is done with increasing RF power density to 3.5W/cm<2> or over in order to make the film minute. After that, the internal stress becomes stable by performing heat treatment at 600-900 deg.C at least for 30min.