| 摘要 |
PURPOSE:To prevent between picture elements from leaking or mixing in colors in a manufacturing method for a solid-state image pickup element in which a scanning circuit, a photoconductive layer are laminated on a semiconductor substrate by simultaneously separating between the picture elements and removing the step of a primary electrode layer. CONSTITUTION:An MOS type scanning circuit is formed on an Si substrate 1. After the primary electrode 71 if formed, it is covered with an insulating layer 6, and the secondary electrode 72 is then formed. A photoconductive layer 8 is accumulated by glow discharge of SiH4 thereon. A mask pattern is formed on the layer 8, and the portion between the picture elements is removed. At this time, the end 7B of the secondary electrode and part of the step 7C of the connector 7D are simultaneously removed. An insulator is filled in the thus formed groove to form a separating layer between the picture elements. The insulator of the unnecessary portion except the grooves is removed, and a transparent electrode 10 is deposited. The thus obtained solid state image sensor has no end 7B of the secondary electrode in the picture element to remove by that much of the defect of the layer 8 in the picture element, thereby reducing the leakage and the color mixture. |
