发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To converge secondary electrons generated from the surface efficiently by a secondary electron collector for an electron microscope by filling an opening section formed to an insulating protective film with a metal capable of being electrically in contact with a predetermined wiring on the wiring. CONSTITUTION:The opening sections (a), (b), (c), (d) in number necessary for the insulating protective films are formed on the wirings 11 which are not directly in contact with pads 10 for extracting the wirings on a semiconductor chip, and the opening sections are filled with the metals 40 capable of being electrically in contact with the wirings 11 as foundations. The central section of the surface of the metal 40 is projected slightly from the surface of the insulating protective film 12 at that time. Accordingly, the metal 40 can be brought electrically into contact with the wiring 11 as the foundation, the metal and the wiring 11 are brought to the same potential when the semiconductor integrated circuit is brought to the state of operation on an observation, and electron beams 30 are irradiated to the filling metal 40 from an SEM and secondary electrons can be observed.
申请公布号 JPS59113635(A) 申请公布日期 1984.06.30
申请号 JP19820223433 申请日期 1982.12.20
申请人 TOSHIBA KK 发明人 MINAGAWA TSUTOMU
分类号 H01L21/822;G01R31/302;H01L21/66;H01L27/04 主分类号 H01L21/822
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