| 摘要 |
PURPOSE:To improve the hygroscopicity of a PSG film, to prevent the disconnection of a wiring layer formed on the PSG film while miniaturizing an electrode window by an RIE and to improve the degree of integration and reliability of the LSI by forming the electrode window with a stepped section of an easy shape to the PSG film without melting the PSG film. CONSTITUTION:The electrode window 12a is formed to the PSG film 12 in thickness such as 1.0mum formed on a semiconductor substrate 11 by the RIE. The electrode window 12a is formed by the sharp stepped section 12a at that time. A resist film 13 in film thickness such as 8,000Angstrom thinner than that of the PSG film 12 is applied and formed on the whole surface. A break can be formed in the resist film 13 at the stepped section 12a of the PSG film at that time. When the resist film 13 continues at the stepped section 12b, the resist film 13 is removed to some extent through oxygen plasma etching, etc., and a break of the resist film is formed. The stepped section 12b of the PSG film 12 is shaved to an easy shape through plasma isotropic etching, etc. When the resist film 12 is incinerated and removed through O2 plasma etching and Al is evaporated to form the Al wiring layer 14, the Al wiring layer is formed without a break because the stepped section of the PSG film 12 forms by gradation. A desired passivation film is formed by a PSG film, a nitride film, etc. |
