| 摘要 |
PURPOSE:To prevent a breaking at a stage of an electrode on the formation of the electrode by selectively removing a first silicon oxide film to expose one part of the surface, doping an impurity to the surface of the first silicon oxide film to form a protective film and forming a second silicon oxide film on the protective film. CONSTITUTION:The silicon oxide films 14 used as masks for diffusion for forming P type high impurity concentration regions 4 and 5 are left, and masks for diffusion by the films 14 are formed newly and an N type upper gate region 6 and N type regions 12 are formed while P-N junctions 13 are formed among the P type regions 4 or 5 and the N type regions 12. Phosphorus for passivation is diffused simultaneously to the silicon oxide films 14, and PSG films 15 are formed to the surfaces of the films 14. The silicon oxide film 16 is formed on the whole surface through CVD. When forming electrode extracting windows 7, 8, eaves are not formed on the N type regions because the end sections of the PSG films terminate on the surfaces of the N type regions 12 and are coated with the silicon oxide film 16 and are not exposed. |
