发明名称 DRIVING METHOD FOR GATE TURN-OFF THYRISTOR CIRCUIT
摘要 PURPOSE:To improve the reliability by differentiating anode current dropping rate under the gate turn OFF condition of respective GTOs which are driven in parallel. CONSTITUTION:GTOs, 21, 22 are connected in parallel, and connected in series with a main power source 26 through a load 27. A current rise suppressing element 24 such as a reactor is provided between a gate pulser 22 and the gate of the GTO22. When the GTOs 21, 22 are turned ON to be conductive, a gate pulse is simultaneously flowed from the pulser 23 to both. Then, the rising rate of the gate current of the GTO22 becomes smaller than that of the gate current of the GTO21 via the element 24.
申请公布号 JPS59113767(A) 申请公布日期 1984.06.30
申请号 JP19820221306 申请日期 1982.12.17
申请人 TOSHIBA KK 发明人 TAKIGAMI KATSUHIKO;AZUMA MINORU;ASAKA MASAYUKI;OKABE KATSUO
分类号 H02M1/06;H03K17/73;(IPC1-7):02M1/06 主分类号 H02M1/06
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