| 摘要 |
PURPOSE:To contrive to simplify the construction of a solid state image pickup element, and to form the device in a small type and in light weight by a method wherein mask electrodes to cover on channel stoppers are formed integrating in one body with transfer electrodes having larger width than width of the channel stoppers thereof, and narrow channels are constructed under the sides of the mask electrodes thereof. CONSTITUTION:Channel stoppers 2 are constructed by introducing moreover P type impurities of boron, etc., in high concentration to a P type silicon semiconductor substrate 1. Transfer electrodes 6'... of the plural number are formed of aluminum, and consisting of main electrodes 61... extended interposing the prescribed interval between them, and mask electrodes 63... elongated in the comb- teeth type from the main electrodes 61... covering the channel stoppers 2... positioning between the main electrodes 61.... Width of the respective mask electrodes 63 are set larger than width of the channel stoppers 2, and respective side parts 62', 62' protruded from the channel stopper 2 of the mask electrode 63 thereof effect the same action with a storage electrode 62. A channel 3 is constructed by putting alternately in a row a broad channel 31 and narrow channels 32', 32' of two pieces provided along the channel stoppers 2.... |
