| 摘要 |
PURPOSE:To facilitate an element isolation, a multilayer wiring, etc. in a small area, and to obtain the semiconductor device, dielectric resistance thereof is large and which is effective for the high degree of integration, by a method wherein a plurality of openings of a layer consisting of a specific oxide are formed, polycrystals are grown on the openings and changed into single crystals, and the layer is patterned and oxidized in a wet O2 atmosphere. CONSTITUTION:A tantalum oxide layer 22 is formed on a substrate 21 made of silicon, etc. in the thickness of approximately 500(Angstrom ) through a reactive sputtering method, etc., a polycrystalline silicon layer 23 is formed through a chemical vapor phase growth method, and the processes are repeated to form a tantalum oxide layer 22' and a polycrystalline silicon layer 23'. These layers are patterned so that the side surfaces of the tantalum oxide layers 22, 22' are exposed. The polycrystalline silicon layers 23, 23' are oxidized while using the tantalum oxide layers 22, 22' as oxidizing-seeds introducing paths through an oxidation at approximately 1,000( deg.C) in the wet O2 atmosphere. Consequently, exposed surfaces and sections being in contact with the tantalum oxide layers 22, 22' are oxidized in the silicon substrate 21 and the polycrystalline silicon layers 23, 23', and silicon dioxide layers 24', 25', 25'' are each formed. Accordingly, a desired layer number of completely insulated multilayer films are formed. |
