| 摘要 |
PURPOSE:To obtain a semiconductor device enabled to enlarge the reverse bias ASO and having enhanced yield by a method wherein the group of insulating films divided into the plural number is interposed between an electrode metal film and a semiconductor, and a lead to the electrode metal film is bonded right above the divided insulating film group. CONSTITUTION:The group 16 of small insulating films is provided on the main surface 4 of an emitter region 3 interposing small gaps 15 between them. The small insulating films 16 thereof are provided directly under the bonding position of an emitter lead 7, respective width sizes thereof are reduced than the usual insulating film 5, and the films are constructed in a slit type 16a, a dot type 16b or a mesh type 16c. A metal film 6 invades in the respective intervals 15 between the group 16 of the small insulating films. At the semiconductor device thereof, because the group 16 of the small insulating films is formed in the metal film 16 directly under the emitter lead 7, the reverse bias ASO can be enlarged, and moreover because a thin alloy layer is formed according to a heat treatment at the bondary between the metal film 6 invaded in the intervals 15 between the group 16 of the respective small insulating films and the emitter region 3, and both are bonded firmly, when the emitter lead 7 is to be bonded to the metal film 6, peeling off of the metal film 6 is not generated, and yield at manufacturing time can be enhanced. |
