| 摘要 |
PURPOSE:To eliminate the adverse influence to the result of plasma treatment by inserting a substance having dehydrating function into the midway of treating gas supplying means. CONSTITUTION:An Si wafer 15 is conveyed from a vacuum chamber coupled to a vacuum vessel 8, and placed on a substrate electrode 12. Thereafter, the vessel 8 is evacuated in high vacuum by vacuum evacuating means connected to a vacuum exhaust port 9. Then, treating gas is passed through a substance 16 having dehydrating function provided in a conduit, moisture is removed, flowed into the vessel 8, and maintained to the prescribed pressure. Then, high frequency power is supplied to the electrode 12 from a high frequency power source 14, thereby producing plasma discharge due to the treating gas, and reactive products are gasified and exhausted from the port 9. The substance 16 is thus inserted into the midway of the treating gas supplying means, thereby removing the moisture contained in the gas. Accordingly, the moisture does not affect the adverse influence to the product. |
