| 摘要 |
PURPOSE:To prevent the radiation of unnecessary peripheral light by providing a light emitting unit in a semiconductor substrate, providing annular electrodes on the light emitting surface, and covering the outside with a light shield. CONSTITUTION:A window layer 1, an active layer 2 and an enclosing layer 3 are superposed on a GaAs substrate, and a P type electrode 4, an SiO2 film 5 and an Au-plated layer 6 are formed. The substrate is removed, and an N type electrode 7 is attached onto the layer 1. An SiO2 film 11 having a thickness of 1/4 of emitting light wavelength is covered on the layer 1 by a sputtering method, a window is opened on the electrode 7, and AuSn of low melting point is deposited. Supersonic cleaning is performed, and an AuSn layer 12 remains in the window. The outside (scribing line) of the electrode 7 and the film 11 on the electrode 7 are removed, cut and separated. The separated element is heated, the layer 12 is molten, the exposed surface of the layer 11 outside the electrode 7 is covered. In this manner, the peripheral light is interrupted by the layer 12 and not externally emitted. According to this structure, an LED can be advantageously coupled with a lens for use. |
