| 摘要 |
PURPOSE:To prevent the reaction product from adhering to inside wall of a reaction chamber, by a method wherein a susceptor is made of transparent quartz and a semiconductor substrate is heated from rear surface by an infrared lamp. CONSTITUTION:A semiconductor substrate 9 is put on a transparent quartz susceptor 8 and heated directly by an infrared heating lamp 23 installed below a transparent quartz bottom plate 21. Carrier gas is flowed from a reaction gas supply port 14, and at the same time non-reaction gas is flowed from a non- reaction gas supply port 16. Temperature of the substrate 9 is measured through a viewing window 19 using an infrared radiation temperature measuring instrument 20, and based on results of the measurement voltage applied to the lamp 23 is controlled. Thus the reaction gas is reacted to the substrate 9 and a vapor growth layer is formed on the substrate 9. In the vapor growth apparatus as above constituted, a cabinet 13, a susceptor support plate 10 and a plate 18 are sufficiently cooled by a cooling water, and since the reaction gas is not flowed in a non-reaction chamber the reaction product is not adhered to the wall surface thereof. |
