| 摘要 |
PURPOSE:To enable to arrange many bumps by forming CCDs for processing a signal inputted to an Si substrate on the back surface of the bump electrodes, increasing the effective area, increasing the number of infrared detectors and enhancing the resolution. CONSTITUTION:A P type Hg1-xCdxTe film 2 is epitaxially formed on a PbTe substrate 1, a window is opened at an insulating film 3, and an N type layer 4 is formed. On the other hand, a window is opened at an SiO2 film 9 on a P type Si 6 having a channel stopper 31, an N type layer 7 is formed, and an input diode is formed. A resist mask is covered on the other side of the substrate, plasma etching is performed to open a connecting hole 22 to the layer 7, P-added polysilicon is buried, P ions are implanted, an N type layer 21 is formed, and an SiO2 film 23 is covered. Aluminum is deposited, gate electrodes 10-12 for inputting, storing and transferring, and electrodes 13 for the CCDs are attached, the infrared detector and the input diode of the substrate are connected therebetween by heat-pressure bonding by an In bump 14 to complete an image sensor. According to this configuration, the image pickup device of high resolution can be obtained without reducing the area of forming a signal processor. |
