发明名称 REACTIVE VAPOR DEPOSITION DEVICE
摘要 PURPOSE:To increase the content of the compd. in the film formed on the surface of a material to be plated without heating and holding said material by providing an excited gas supply device in a vacuum vessel, and converting a gas having at least one component in the compsn. of a compd. film as a constituting element into plasma then ejecting the plasma into the vapor particle group evaporated by a heater. CONSTITUTION:A reactive vapor deposition device is constituted of a material 1 to be plated on which a film of a compd. is to be formed, an evaporating material which is at least one component in the compsn. of the compd. film, and a heater 4 which evaporates the material 3 to vapor particles. An excited gas supply device 9 is further provided in a vacuum vessel 5 and the gas contg. at least one component in the compsn. of the compd. film as a constituting element is converted into plasma in the device 9. Such plasma is ejected from an ejection port into the vapor particle group evaporated by the heater 4.
申请公布号 JPS59113173(A) 申请公布日期 1984.06.29
申请号 JP19820222393 申请日期 1982.12.17
申请人 MATSUSHITA DENKI SANGYO KK 发明人 OONISHI YOUICHI;IKEDA TANEJIROU
分类号 C23C16/44;C23C14/00;C23C14/32 主分类号 C23C16/44
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