发明名称 |
REACTIVE VAPOR DEPOSITION DEVICE |
摘要 |
PURPOSE:To increase the content of the compd. in the film formed on the surface of a material to be plated without heating and holding said material by providing an excited gas supply device in a vacuum vessel, and converting a gas having at least one component in the compsn. of a compd. film as a constituting element into plasma then ejecting the plasma into the vapor particle group evaporated by a heater. CONSTITUTION:A reactive vapor deposition device is constituted of a material 1 to be plated on which a film of a compd. is to be formed, an evaporating material which is at least one component in the compsn. of the compd. film, and a heater 4 which evaporates the material 3 to vapor particles. An excited gas supply device 9 is further provided in a vacuum vessel 5 and the gas contg. at least one component in the compsn. of the compd. film as a constituting element is converted into plasma in the device 9. Such plasma is ejected from an ejection port into the vapor particle group evaporated by the heater 4. |
申请公布号 |
JPS59113173(A) |
申请公布日期 |
1984.06.29 |
申请号 |
JP19820222393 |
申请日期 |
1982.12.17 |
申请人 |
MATSUSHITA DENKI SANGYO KK |
发明人 |
OONISHI YOUICHI;IKEDA TANEJIROU |
分类号 |
C23C16/44;C23C14/00;C23C14/32 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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